Gate structuring on bilayer MoS2 nFET enables ultrahigh current density

Junyoung Kwon†, Kyoung Yeon Kim†*, Dongwon Jang†, Min Seok Yoo, Alum Jung, Dong-Su Ko, Yoonhoo Ha, Huije Ryu, Woon Ih Choi, Yeonchoo Cho, Changhyun Kim, Eunji Yang, Eun-Kyu Lee, Chang-Seok Lee, Sang Won Kim, Uihui Kwon, Dae Sin Kim, Sung Kyu Lim*, Kyung-Eun Byun*, Minsu Seol*, Jeehwan Kim*
January 2026
PDF DOI
Type
Journal article
Publication
Nature Materials 25, 824-831 (2026)
Selected