<?xml version="1.0" encoding="utf-8" standalone="yes"?><rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom"><channel><title>Xu Cui | SIM Lab @ Hanyang</title><link>https://simlab-hanyang.netlify.app/author/xu-cui/</link><atom:link href="https://simlab-hanyang.netlify.app/author/xu-cui/index.xml" rel="self" type="application/rss+xml"/><description>Xu Cui</description><generator>Hugo Blox Builder (https://hugoblox.com)</generator><language>en-us</language><lastBuildDate>Thu, 11 May 2017 00:00:00 +0000</lastBuildDate><image><url>https://simlab-hanyang.netlify.app/media/icon_hu1894465713090127486.png</url><title>Xu Cui</title><link>https://simlab-hanyang.netlify.app/author/xu-cui/</link></image><item><title>Thickness-Dependent Schottky Barrier Height of MoS2 Field-Effect Transistors</title><link>https://simlab-hanyang.netlify.app/publication/2017-schottky-barrier-mos2-nanoscale/</link><pubDate>Thu, 11 May 2017 00:00:00 +0000</pubDate><guid>https://simlab-hanyang.netlify.app/publication/2017-schottky-barrier-mos2-nanoscale/</guid><description/></item></channel></rss>