Semiconductor Integration Materials Laboratory
SIM Lab
Semiconductor Integration Materials Laboratory
SIM Lab
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Gwan-Hyoung Lee
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200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors
Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices
Interactions between Primary Neurons and Graphene Films with Different Structure and Electrical Conductivity
Thickness Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe2 Layers by Plasma-Driven Chalcogen Defects Engineering
Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds
High-performance Monolayer MoS2 Field-effect Transistor with Large-scale Nitrogen-doped Graphene Electrodes for Ohmic Contact
Ethanol-CVD Growth of Large Single-Crystal Graphene on Flat Cu Surfaces
Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates
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