Semiconductor Integration Materials Laboratory
SIM Lab
Semiconductor Integration Materials Laboratory
SIM Lab
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Eunji Yang
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Gate structuring on bilayer MoS2 nFET enables ultrahigh current density
EOT-scaled 2D FETs on embedded bottom gates using direct channel growth on 200 mm wafers
Transfer-free 2D CMOS multi-bridge-channel FET
Low-temperature growth of nanocrystalline graphene on metal thin films
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