<?xml version="1.0" encoding="utf-8" standalone="yes"?><rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom"><channel><title>Dongwon Jang† | SIM Lab @ Hanyang</title><link>https://simlab-hanyang.netlify.app/author/dongwon-jang/</link><atom:link href="https://simlab-hanyang.netlify.app/author/dongwon-jang/index.xml" rel="self" type="application/rss+xml"/><description>Dongwon Jang†</description><generator>Hugo Blox Builder (https://hugoblox.com)</generator><language>en-us</language><lastBuildDate>Mon, 19 Jan 2026 00:00:00 +0000</lastBuildDate><image><url>https://simlab-hanyang.netlify.app/media/icon_hu1894465713090127486.png</url><title>Dongwon Jang†</title><link>https://simlab-hanyang.netlify.app/author/dongwon-jang/</link></image><item><title>Gate structuring on bilayer MoS2 nFET enables ultrahigh current density</title><link>https://simlab-hanyang.netlify.app/publication/2026-gate-structuring-bilayer-mos2/</link><pubDate>Mon, 19 Jan 2026 00:00:00 +0000</pubDate><guid>https://simlab-hanyang.netlify.app/publication/2026-gate-structuring-bilayer-mos2/</guid><description/></item></channel></rss>