SIM Lab

Semiconductor Integration Materials Laboratory, Hanyang University

The SIM Lab at Hanyang University focuses on materials innovation to enable next-generation semiconductor integration technologies, ranging from novel 2D materials to monolithic 3D architectures.

Meet the Team

Latest News

Last updated on Aug 23, 2026 1 min read News
SIM Lab Officially Launches on September 1, 2026

SIM Lab (Semiconductor Integration Materials Laboratory) begins its research activities at the Division of Materials Science and Engineering, Hanyang University.

Selected Publications

January 2026 Nature Materials 25, 824-831 (2026)
Gate structuring on bilayer MoS2 nFET enables ultrahigh current density
Gate structuring on bilayer MoS2 nFET enables ultrahigh current density
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February 2025 Nature 638, 957-964 (2025)
Hypotaxy of wafer-scale single crystal transition metal dichalcogenides
Hypotaxy of wafer-scale single crystal transition metal dichalcogenides
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December 2024 Nature 636, 615-621 (2024)
Growth-based monolithic 3D integration of single-crystal 2D semiconductors
Growth-based monolithic 3D integration of single-crystal 2D semiconductors
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July 2024 Nature Nanotechnology 19, 895-906 (2024)
The future of two-dimensional semiconductors beyond Moore's law
The future of two-dimensional semiconductors beyond Moore's law
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April 2024 Nature Electronics 7, 356-364 (2024)
200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors
200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors
PDF DOI
January 2024 Advanced Materials 36, 2310282 (2024)
Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization
Ultraclean Interface of Metal Chalcogenides with Metal through Confined Interfacial Chalcogenization
PDF DOI
January 2024 Advanced Materials 36, 2310498 (2024)
Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors
Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light-Emitting Transistors
PDF DOI
October 2023 Advanced Materials 35, 2204912 (2023)
Amorphous Carbon Films for Electronic Applications
Amorphous Carbon Films for Electronic Applications
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February 2023 Nature Electronics 6, 146-153 (2023)
Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography
Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography
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October 2020 Advanced Materials 32, 2003567 (2020) — Highlighted as Front Cover Image and by eurekalert, phys.org
Multi-operation Mode Light Emitting Field-Effect Transistors Based on van der Waals Heterostructure
Multi-operation Mode Light Emitting Field-Effect Transistors Based on van der Waals Heterostructure
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September 2019 Advanced Materials 31, 1903424 (2019)
Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds
Tailoring Surface Properties via Functionalized Hydrofluorinated Graphene Compounds
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September 2018 Nature Communications 9, 3988 (2018) — Highlighted by Nature Research Device and Materials Engineering, Yonsei Press, and Donga Science
Atomically-precise Graphene Etch Stops for 3D Integrated Systems from 2D Material Heterostructures
Atomically-precise Graphene Etch Stops for 3D Integrated Systems from 2D Material Heterostructures
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